GT30J122 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT30J122
Manufacturer	Toshiba
File Size	557.62 KB
Description	Silicon N-Channel IGBT
Datasheet	GT30J122 Datasheet

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www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 100 75 150 −55~150 Unit V V A W °C °C JEDEC JEITA ― ― TOSHIBA 2-16F1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 5.