Datasheet Details
Part number:
GT30J101
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
291.77 KB
Description:
Silicon n-channel igbt.
GT30J101_ToshibaSemiconductor.pdf
GT30J101_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT30J101
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
291.77 KB
Description:
Silicon n-channel igbt.
GT30J101, Silicon N-Channel IGBT
GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms
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