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TIM1011-5L Datasheet - Toshiba Semiconductor

TIM1011-5L, MICROWAVE POWER GaAs FET

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Datasheet Details

Part number:

TIM1011-5L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

276.23 KB

Description:

MICROWAVE POWER GaAs FET

Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

TIM1011-5L Distributors

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