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TIM1213-2L MICROWAVE POWER GaAs FET

TIM1213-2L Description

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TIM1213-2L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-2L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM1213-2L-like datasheet