Datasheet Specifications
- Part number
- TIM1213-8UL
- Manufacturer
- Toshiba ↗
- File Size
- 468.86 KB
- Datasheet
- TIM1213-8UL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
.
Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-8UL RF PERFORMANCE SPECIFITIM1213-8UL Distributors
📁 Related Datasheet
📌 All Tags