Datasheet Specifications
- Part number
- TIM1213-18L
- Manufacturer
- Toshiba ↗
- File Size
- 484.42 KB
- Datasheet
- TIM1213-18L-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
.
Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-18L RF PERFORMANCE SPECIFITIM1213-18L Distributors
📁 Related Datasheet
📌 All Tags