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TIM1213-18L MICROWAVE POWER GaAs FET

TIM1213-18L Description

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TIM1213-18L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-18L RF PERFORMANCE SPECIFI

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM1213-18L-like datasheet