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TIM1011-15L MICROWAVE POWER GaAs FET

TIM1011-15L Description

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TIM1011-15L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-15L RF PERFORMANCE SPECIFI

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM1011-15L-like datasheet