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TIM1112-4UL MICROWAVE POWER GaAs FET

TIM1112-4UL Description

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TIM1112-4UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 9.5dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1112-4UL RF PERFORMANCE SPECIFICA

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM1112-4UL-like datasheet