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TIM1112-15L MICROWAVE POWER GaAs FET

TIM1112-15L Description

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TIM1112-15L Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 6.0dB at 11.7GHz to 12.7GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1112-15L RF PERFORMANCE SPECIFI

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM1112-15L-like datasheet