SSM4K27CT Datasheet - Toshiba Semiconductor

SSM4K27CT, Silicon N-Channel MOSFET

SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching

Applications

* Small package
* Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Sou

SSM4K27CT_ToshibaSemiconductor.pdf