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2N7000 - N-Channel Enhancement Mode Power MosFET

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

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Datasheet Details

Part number 2N7000
Manufacturer SeCoS
File Size 145.45 KB
Description N-Channel Enhancement Mode Power MosFET
Datasheet download datasheet 2N7000 Datasheet

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Full PDF Text Transcription

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Elektronische Bauelemente 2N7000 0.2A , 60V , RDS(ON) 5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability APPLICATIONS  Load switch for portable devices  DC/DC converter MARKING 2N 7000 021  D  G ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current ID Power Dissipation PD Thermal Resistance from Junction to Ambient RθJA Operating Junction and Storage Temperature Range TJ, TSTG  S TO-92  Source  Gate  Drain REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 14.
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