Download 2N7002W Datasheet PDF
SeCoS Halbleitertechnologie GmbH
2N7002W
Elektronische Bauelemente 115 m AMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET Ro HS pliant Product A suffix of "-C" specifies halogen & lead-free N- Channel SOT- 323 MAXIMUM RATINGS Rating Symbol Value Unit Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Drain Current - Continuous TC = 25°C (Note 1.) - Continuous TC = 100°C (Note 1.) - Pulsed (Note 2.) VDSS VDGR ID ID IDM ±ā115 ±ā75 ±ā800 Vdc Vdc m Adc Gate- Source Voltage - Continuous - Non- repetitive (tp ≤ 50 µs) THERMAL CHARACTERISTICS ±ā20 Vdc VGSM ±ā40 Vpk Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 3.) TA = 25°C Derate above 25°C 225 m W 1.8 m W/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C RθJA...