2N7002T
Elektronische Bauelemente
115 m AMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET
Ro HS pliant Product
Small Signal MOSFET 115 m Amps, 60 Volts
N- Channel SOT- 523
MAXIMUM RATINGS
Rating
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 µs)
Symbol Value Unit
VDSS
Vdc
VDGR
Vdc
±ā20
Vdc
VGSM
±ā40
Vpk
N- Channel 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board
(Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max Unit
150 m W
1.8 m W/°C
RθJA TJ, Tstg
- ā55 to +150
°C/W °C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR- 5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5%...
