Datasheet4U Logo Datasheet4U.com

K4S560832E-UC75, K4S560432E-UC75 SDRAM 256Mb E-die

K4S560832E-UC75 Description

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * .

K4S560832E-UC75 Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4S560832E-UC75, K4S560432E-UC75. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
K4S560832E-UC75, K4S560432E-UC75
Manufacturer
Samsung
File Size
195.84 KB
Datasheet
K4S560432E-UC75-Samsung.pdf
Description
SDRAM 256Mb E-die
Note
This datasheet PDF includes multiple part numbers: K4S560832E-UC75, K4S560432E-UC75.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • K4S560832E-NC75 - SDRAM 256Mb E-die (Samsung semiconductor)
  • K4S560832E-NCL75 - SDRAM 256Mb E-die (Samsung semiconductor)
  • K4S560832E-TC75 - 256Mb E-die SDRAM Specification (Samsung semiconductor)
  • K4S560832E-TL75 - 256Mb E-die SDRAM Specification (Samsung semiconductor)
  • K4S560832A - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
  • K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
  • K4S560832C - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
  • K4S560832D - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

📌 All Tags

SDRAM 256Mb E-die Samsung
Samsung K4S560832E-UC75-like datasheet