K4S560832E-TL75 256Mb E-die SDRAM Specification

Samsung semiconductor

Description

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September.2003 * Samsung Electronics reserves the rig.
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x.

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Datasheet Specifications

Part number: K4S560832E-TL75
Manufacturer: Samsung semiconductor
File Size: 198.76 KB
Datasheet: K4S560832E-TL75_Samsungsemiconductor.pdf
Description: 256Mb E-die SDRAM Specification

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* Ordering Information Part No. K4S560432E-TC(L)75 K4S560832E-TC(L)75 K4S561632E-TC(L)60/75 Orgainization 64M x 4 32M x 8 16M x 16 Max Freq. 133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP 54pin TSOP 54pin TSOP Organization 64Mx4 32Mx8 16Mx16 Row Address A0~A12 A0~A12 A0~A12 C

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📁 Related Datasheet

K4S560832E-UC75 K4S560432E-UC75 K4S561632C K4S561632E-UC60 K4S561632E-UC75 K4S561632H

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K4S560832E-TL75 256Mb E-die SDRAM Specification Samsung semiconductor

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