Description
K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep.1999 * Samsung Electronics reserves the right.
The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high p.
Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
Applications
* ORDERING INFORMATION
Part No. K4S560832A-TC/L75 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE LDQM
Data Input Register
Bank Select 8M x 8 Sense
