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K4S560832A, K4S 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S560832A Description

K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep.1999 * Samsung Electronics reserves the right.
The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high p.

K4S560832A Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

K4S560832A Applications

* ORDERING INFORMATION Part No. K4S560832A-TC/L75 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 8M x 8 Sense

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This datasheet PDF includes multiple part numbers: K4S560832A, K4S. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S560832A, K4S
Manufacturer
Samsung semiconductor
File Size
126.92 KB
Datasheet
K4S-560832.pdf
Description
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
Note
This datasheet PDF includes multiple part numbers: K4S560832A, K4S.
Please refer to the document for exact specifications by model.

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256Mbit SDRAM 8bit Banks Synchronous DRAM LVTTL Samsung semiconductor
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