Datasheet4U Logo Datasheet4U.com

K4S561632H 256Mb H-Die SDRAM

K4S561632H Description

www.DataSheet4U.com SDRAM 256Mb H-die (x4, x8, x16) CMOS SDRAM 256Mb H-die SDRAM Specification DataShee DataSheet4U.com INFORMATION IN THIS DOCU.
The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x.

K4S561632H Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

K4S561632H Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. D

📥 Download Datasheet

Preview of K4S561632H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • K4S561632A - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
  • K4S561632B - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
  • K4S561632C - 256Mbit SDRAM (Samsung)
  • K4S561632D - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
  • K4S561632E-NC60 - SDRAM 256Mb E-die (Samsung semiconductor)
  • K4S561632E-NC75 - SDRAM 256Mb E-die (Samsung semiconductor)
  • K4S561632E-NCL60 - SDRAM 256Mb E-die (Samsung semiconductor)
  • K4S561632E-NCL75 - SDRAM 256Mb E-die (Samsung semiconductor)

📌 All Tags

256Mb H-Die SDRAM Samsung Electronics
Samsung Electronics K4S561632H-like datasheet