K4S280832B 128M-bit SDRAM

Samsung Electronics

Description

K4S280832B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug.1999 * Samsung Electronics reserves the right.
The K4S280832B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high p.

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Datasheet Specifications

Part number: K4S280832B
Manufacturer: Samsung Electronics
File Size: 107.62 KB
Datasheet: K4S280832B_SamsungElectronics.pdf
Description: 128M-bit SDRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part No. K4S280832B-TC/L75 K4S280832B-TC/L80 K4S280832B-TC/L1H K4S280832B-TC/L1L K4S280832B-TC/L10 Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) 66MHz(CL=2 &3) LVTTL 54 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Regi

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📁 Related Datasheet

K4S280832A K4S280832C K4S280832E-TC75 K4S280832E-TL75 K4S280832F-TC75 K4S280832F-TL75

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K4S280832B 128M-bit SDRAM Samsung Electronics

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