K4S561632A 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Description

K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep.1999 * Samsung Electronics reserves the righ.
The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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Datasheet Specifications

Part number: K4S561632A
Manufacturer: Samsung semiconductor
File Size: 127.17 KB
Datasheet: K4S561632A_Samsungsemiconductor.pdf
Description: 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part No. K4S561632A-TC/L75 K4S561632A-TC/L80 K4S561632A-TC/L1H K4S561632A-TC/L1L Max Freq. 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 4M x 16 Sens

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K4S561632A 256Mbit SDRAM 16bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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