K4S56163PF-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S56163PF-RG
Manufacturer	Samsung semiconductor
File Size	114.91 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4S56163PF-RG Datasheet
Additional preview pages of the K4S56163PF-RG datasheet.

Product details

Description

The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung semiconductor

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K4S56163PF-F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S561632A - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
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Published: Apr 7, 2005 |