K4S56163PF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S56163PF
Manufacturer	Samsung semiconductor
File Size	114.91 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4S56163PF Datasheet
Additional preview pages of the K4S56163PF datasheet.

Product details

Description

The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung semiconductor

K4S56163PF-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF-F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S561632A - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
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K4S561632D - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

Published: Apr 7, 2005 |