STPSC8TH13TI Datasheet - STMicroelectronics

STPSC8TH13TI, Dual 650V power Schottky silicon carbide diode

STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series ,QVXODWHG72$% .
The SiC diode is an ultrahigh performance power Schottky diode.

STPSC8TH13TI-STMicroelectronics.pdf

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Datasheet Details

Part number:

STPSC8TH13TI

Manufacturer:

STMicroelectronics ↗

File Size:

170.55 KB

Description:

Dual 650V power Schottky silicon carbide diode

Features

* No or negligible reverse recovery
* Switching behavior independent of temperature
* Suited for specific bridge-less topologies
* High forward surge capability
* Insulated package:
* Capacitance: 7 pF
* Insulated voltage: 2500 V rms Datasheet - production data

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STPSC8TH13TI Dual 650V power Schottky silicon carbide diode STMicroelectronics

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