Datasheet4U Logo Datasheet4U.com

STPSC8H065-Y - Automotive 650V 8A high surge silicon carbide power Schottky diode

Description

The SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • AEC-Q101 qualified.
  • No reverse recovery charge in.

📥 Download Datasheet

Datasheet preview – STPSC8H065-Y

Datasheet Details

Part number STPSC8H065-Y
Manufacturer STMicroelectronics
File Size 401.81 KB
Description Automotive 650V 8A high surge silicon carbide power Schottky diode
Datasheet download datasheet STPSC8H065-Y Datasheet
Additional preview pages of the STPSC8H065-Y datasheet.

📁 Similar Datasheet

  • STPSC806 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC1006 - Schottky silicon carbide diode (ST Microelectronics)
  • STPSC1206 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC406 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC606 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPS0520M - LOW DROP POWER SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0520Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0530Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0540Z - (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0560Z - SCHOTTKY RECTIFIER (ST Microelectronics)
Other Datasheets by STMicroelectronics
  • STPSC8H065 - 650V 8A high surge silicon carbide power Schottky diode
  • STPSC8H065DLF - 650V power Schottky silicon carbide diode
  • STPSC806D - 600 V power Schottky silicon carbide diode
  • STPSC8TH13TI - Dual 650V power Schottky silicon carbide diode
  • STPSC10065 - Schottky silicon carbide diode
  • STPSC10065DLF - power Schottky silicon carbide diode
  • STPSC1006D - 600 V power Schottky silicon carbide diode
  • STPSC10H065 - power Schottky silicon carbide diode

Full PDF Text Transcription

Click to expand full text
STPSC8H065-Y Datasheet Automotive 650 V, 8 A high surge silicon carbide power Schottky diode AK K A A NC D²PAK HV K KA NC DPAK Product label Product status STPSC8H065-Y Product summary Symbol Value IF(AV) 8A VRRM 650 V Tj(max.) 175 °C Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant component Applications • On board charger Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.
Published: |