RF2L36075CF2 RF power LDMOS transistor

STMicroelectronics

Description

RF2L36075CF2 Datasheet 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom si.
The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications.

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Datasheet Specifications

Part number: RF2L36075CF2
Manufacturer: STMicroelectronics ↗
File Size: 1.35 MB
Datasheet: RF2L36075CF2-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code Frequency VDD POUT Gain Efficiency RF2L36075CF2 3500 MHz 28 V 75 W 12.5 dB 45%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internal input matching for ease of use
* Large positive and negative gate-source voltage ra

Applications

* Telecom

RF2L36075CF2 Distributors

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RF2L36075CF2 power LDMOS transistor STMicroelectronics

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