RF2L16080CF2 RF power LDMOS transistor

STMicroelectronics

RF2L16080CF2 Description

RF2L16080CF2 Datasheet 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 Gate 2 Drain 3 Sourc.
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies.

RF2L16080CF2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally input matched for ease of use
* Large positive and negative gate-source voltage ra

RF2L16080CF2 Applications

* Satellite comms
* Telecom

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Datasheet Details

Part number: RF2L16080CF2
Manufacturer: STMicroelectronics ↗
File Size: 1.87 MB
Datasheet: RF2L16080CF2-STMicroelectronics.pdf
Description: RF power LDMOS transistor

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power LDMOS transistor STMicroelectronics

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