RF2L16080CF2 RF power LDMOS transistor

STMicroelectronics

Description

RF2L16080CF2 Datasheet 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 Gate 2 Drain 3 Sourc.
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies.

📥 Download Datasheet

RF2L16080CF2 Datasheet Preview — Preview of RF2L16080CF2 PDF

Datasheet Specifications

Part number: RF2L16080CF2
Manufacturer: STMicroelectronics ↗
File Size: 1.87 MB
Datasheet: RF2L16080CF2-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code Frequency VDD POUT Gain Efficiency RF2L16080CF2 1625 MHz 28 V 80 W 18 dB 57%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally input matched for ease of use
* Large positive and negative gate-source voltage ra

Applications

* Satellite comms
* Telecom

RF2L16080CF2 Distributors

📁 Related Datasheet

RF2L6S RF2001 RF2001NS2D RF2001NS2DFH RF2001NS3D RF2001NS3DFH

📌 All Tags

RF2L16080CF2 power LDMOS transistor STMicroelectronics

STMicroelectronics RF2L16080CF2-like datasheet