RF2L24280CB4 RF Power LDMOS transistor

STMicroelectronics

Description

RF2L24280CB4 Datasheet 280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain .
The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and.

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Datasheet Specifications

Part number: RF2L24280CB4
Manufacturer: STMicroelectronics ↗
File Size: 1.12 MB
Datasheet: RF2L24280CB4-STMicroelectronics.pdf
Description: RF Power LDMOS transistor

Features

* Order code Frequency VDD POUT Gain Efficiency RF2L24280CB4 2450 MHz 28 V 280 W 13 dB 60%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched pair transistors in push-pull configuration
* Large positive and negative

RF2L24280CB4 Distributors

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RF2L24280CB4 Power LDMOS transistor STMicroelectronics

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