RF2L15200CB4 RF power LDMOS transistor

STMicroelectronics

RF2L15200CB4 Description

RF2L15200CB4 Datasheet 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain .
The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.

RF2L15200CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.5 dB 72%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* Exce

RF2L15200CB4 Applications

* Broadband commercial communications
* TV broadcast
* Avioncs

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RF2L15200CB4 Datasheet Preview — Preview of RF2L15200CB4 PDF

Datasheet Details

Part number: RF2L15200CB4
Manufacturer: STMicroelectronics ↗
File Size: 769.70 KB
Datasheet: RF2L15200CB4-STMicroelectronics.pdf
Description: RF power LDMOS transistor

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power LDMOS transistor STMicroelectronics

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