RF2L16180CF2 RF power LDMOS transistor

STMicroelectronics

RF2L16180CF2 Description

RF2L16180CF2 Datasheet 180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor 1 3 2 B2 Pin connection Pin Connection 1 Gate 2 Source (bottom s.
The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the.

RF2L16180CF2 Features

* Order code Frequency VDD POUT Gain Efficiency RF2L16180CF2 1470 MHz 28 V 180 W 17.5 dB 56%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internal input matching for ease of use
* Large positive and negative gate-source voltage r

RF2L16180CF2 Applications

* Base stations
* L-band radars

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Datasheet Details

Part number: RF2L16180CF2
Manufacturer: STMicroelectronics ↗
File Size: 494.30 KB
Datasheet: RF2L16180CF2-STMicroelectronics.pdf
Description: RF power LDMOS transistor

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power LDMOS transistor STMicroelectronics

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