RF2L36040CF2 RF power LDMOS transistor

STMicroelectronics

Description

RF2L36040CF2 Datasheet 40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 Gate 2 Drain 3 Sourc.
The RF2L36040CF2 is a 40 W, 28 V internally matched LDMOS FET, designed for cellular and S-band radar applications at frequencies from 2.

📥 Download Datasheet

RF2L36040CF2 Datasheet Preview — Preview of RF2L36040CF2 PDF

Datasheet Specifications

Part number: RF2L36040CF2
Manufacturer: STMicroelectronics ↗
File Size: 499.38 KB
Datasheet: RF2L36040CF2-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code Frequency VDD POUT Gain Efficiency RF2L36040CF2 3600 MHz 28 V 40 W 14 dB 48%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched for ease of use
* Large positive and negative gate-source voltage range fo

Applications

* Telecom

RF2L36040CF2 Distributors

📁 Related Datasheet

RF2L6S RF2001 RF2001NS2D RF2001NS2DFH RF2001NS3D RF2001NS3DFH

📌 All Tags

RF2L36040CF2 power LDMOS transistor STMicroelectronics

STMicroelectronics RF2L36040CF2-like datasheet