RJP63K2DPP-M0 Datasheet - Renesas

RJP63K2DPP-M0, N-Channel IGBT

Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Details

Part number:

RJP63K2DPP-M0

Manufacturer:

Renesas ↗

File Size:

205.86 KB

Description:

N-Channel IGBT

Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS0468EJ0200 Rev.2.00 Jun 15, 20

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJP63K2DPP-M0 N-Channel IGBT Renesas

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