RJP6065DPM N-Channel IGBT

Renesas

RJP6065DPM Description

Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP6065DPM Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
* Gate to emitter voltage rating 30 V
* Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

RJP6065DPM Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Datasheet Details

Part number: RJP6065DPM
Manufacturer: Renesas ↗
File Size: 144.17 KB
Datasheet: RJP6065DPM_Renesas.pdf
Description: N-Channel IGBT

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