RJP60D0DPE N-Channel IGBT

Renesas

RJP60D0DPE Description

Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP60D0DPE Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
* Gate to emitter voltage rating 30 V
* Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Outline RENESAS Pack

RJP60D0DPE Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Datasheet Details

Part number: RJP60D0DPE
Manufacturer: Renesas ↗
File Size: 137.11 KB
Datasheet: RJP60D0DPE_Renesas.pdf
Description: N-Channel IGBT

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