RJP60D0DPM N-Channel IGBT

Renesas

RJP60D0DPM Description

Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP60D0DPM Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)
* Gate to emitter voltage rating 30 V
* Pb-free lead plating and chip bonding R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Outline RENESAS Packa

RJP60D0DPM Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Datasheet Details

Part number: RJP60D0DPM
Manufacturer: Renesas ↗
File Size: 136.47 KB
Datasheet: RJP60D0DPM_Renesas.pdf
Description: N-Channel IGBT

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