RJP60D0DPP-M0 Datasheet - Renesas Technology

RJP60D0DPP-M0, Silicon N-Channel IGBT

Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP60D0DPP-M0_RenesasTechnology.pdf

RJP60D0DPP-M0 Datasheet Preview — Preview of RJP60D0DPP-M0 PDF

Datasheet Details

Part number:

RJP60D0DPP-M0

Manufacturer:

Renesas ↗ Technology

File Size:

97.19 KB

Description:

Silicon N-Channel IGBT

Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
* Gate to emitter voltage rating 30 V
* Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Outline RENESAS Pack

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

RJP60D0DPP-M0 Distributors

📁 Related Datasheet

RJP60D0DPE RJP60D0DPK RJP60D0DPM RJP6065DPM RJP60F0DPE RJP60F0DPM

📌 All Tags

RJP60D0DPP-M0 Silicon N-Channel IGBT Renesas Technology

Renesas Technology RJP60D0DPP-M0-like datasheet