RJP60F0DPM Datasheet - Renesas

RJP60F0DPM, N-Channel IGBT

Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP60F0DPM_Renesas.pdf

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Datasheet Details

Part number:

RJP60F0DPM

Manufacturer:

Renesas ↗

File Size:

140.96 KB

Description:

N-Channel IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
* Trench gate and thin wafer technology
* High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJP60F0DPM N-Channel IGBT Renesas

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