RJP60F5DPM Datasheet - Renesas

RJP60F5DPM, N-Channel IGBT

Preliminary Datasheet RJP60F5DPM 600 V - 40 A - IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Details

Part number:

RJP60F5DPM

Manufacturer:

Renesas ↗

File Size:

141.97 KB

Description:

N-Channel IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
* Trench gate and thin wafer technology
* High speed switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJP60F5DPM N-Channel IGBT Renesas

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