RJP63F3DPP-M0 Datasheet - Renesas

RJP63F3DPP-M0, N-Channel IGBT

Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP63F3DPP-M0_Renesas.pdf

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Datasheet Details

Part number:

RJP63F3DPP-M0

Manufacturer:

Renesas ↗

File Size:

240.41 KB

Description:

N-Channel IGBT

Features

* Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJP63F3DPP-M0 N-Channel IGBT Renesas

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