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HAT1127H - Silicon P-Channel Power MOSFET

Features

  • Capable of.
  • 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Ultra Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS =.
  • 10 V) Outline.

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Full PDF Text Transcription

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HAT1127H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • High density mounting • Ultra Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 5 D SSS 123 REJ03G1330-0500 Rev.5.00 Jan 20, 2006 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 θch-c Note2 Tch Tstg Ratings –30 –20/+10 –40 –160 –40 30 4.
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