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HAT1041T - Silicon P-Channel Power MOSFET

Features

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  • Low on-resistance.
  • Capable of 2.5 V gate drive.
  • Low drive current.
  • High density mounting Outline TSSOP-8 65 34 87 12 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1041T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10.

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Datasheet Details

Part number HAT1041T
Manufacturer Renesas
File Size 186.11 KB
Description Silicon P-Channel Power MOSFET
Datasheet download datasheet HAT1041T Datasheet

Full PDF Text Transcription

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
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