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HAT1043M
Silicon P Channel Power MOS FET Power Switching
ADE-208-754D (Z) 5th Edition February 1999 Features
• • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source
Outline
TSOP–6
4 5 6 1 2 5 6 D D D D 2 1 3 G 3
4 Source 3 Gate 1, 2, 5, 6 Drain
S 4
HAT1043M
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse) I DR
Note 1 Note 2 Note 2 Note 3
Ratings –20 ±12 –4.4 –17.6 –4.4 2.0 1.05 150 –55 to +150
Unit V V A A A W W °C °C
Pch (pulse)
Pch (continuous) Channel temperature Storage temperature Note: Tch Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
HAT1043M Datasheet
