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HAT1111C
Silicon P Channel MOS FET Power Switching
REJ03G0446-0600 Rev.6.00 May 19.2005
Features
• Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) www.DataSheet4U.com • Low drive current. • 4.5 V gate drive devices. • High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1
2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID (pulse)Note1 IDR PchNote 2 Ratings –60 –20 / +10 –2 –8 –2 1.25 Unit V V A A A W °C °C
Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
HAT1111C Datasheet
