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HAT1108C
Silicon P Channel MOS FET Power Switching
REJ03G1234-0500 Rev.5.00 Aug 30, 2006
Features
• Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = –10 V) www.DataSheet4U.com • Low drive current. • 4.5 V gate drive devices. • High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
1
2
3
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Drain to Source voltage VDSS –30 Gate to Source voltage VGSS –20 / +10 Drain current ID –1.5 Note1 Drain peak current ID (pulse) –6 Body - Drain diode reverse drain current IDR –1.5 Channel dissipation PchNote 2 830 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
HAT1108C Datasheet
