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HAT1110R - Silicon P-Channel Power MOSFET

Features

  • Capable of.
  • 4.5 V gate drive.
  • Low drive current.
  • High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS.
  • 80 Gate to source voltage VGSS ±20 Drain current Drain peak current ID.
  • 1 ID(pulse)Note1.
  • 6 Reverse drain current Channel.

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Datasheet Details

Part number HAT1110R
Manufacturer Renesas
File Size 103.18 KB
Description Silicon P-Channel Power MOSFET
Datasheet download datasheet HAT1110R Datasheet

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Full PDF Text Transcription

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HAT1110R Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS –80 Gate to source voltage VGSS ±20 Drain current Drain peak current ID –1 ID(pulse)Note1 –6 Reverse drain current Channel dissipation Channel dissipation IDR –1 Pch Note2 1.2 Pch Note3 1.8 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3.
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