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HAT1139H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 7.0 mΩ typ. (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5
5
5
D
D
1 234
2
3
G
G
S
S
1
4
REJ03G1244-0200 Rev.2.00
Jun.22.2005
1, 4 Source 2, 3 Gate 5 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation : Tc = 25°C 3.
HAT1139H Datasheet
