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H5N3011P - N-Channel MOSFET

Renesas Technology

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Datasheet Details

Part number	H5N3011P
Manufacturer	Renesas ↗ Technology
File Size	107.82 KB
Description	N-Channel MOSFET
Datasheet	H5N3011P_RenesasTechnology.pdf

H5N3011P Product details

Features

Low on-resistance.
Low leakage current.
High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C.

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Published: Dec 28, 2007 |