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H5N2004DL Silicon N Channel MOS FET High Speed Power Switching

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Description

H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 .

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Features

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* Low
* Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
* High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
* Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID =

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H5N2004DL Silicon Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology H5N2004DL-like datasheet
H5N2004DS
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H5N2003P