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QPA1022 - 4 W GaN Power Amplifier

Datasheet Summary

Description

QPA1022 QPA1022 Amplifier, Shipping Tray, Qty 50 QPA1022TR QPA1022 Amplifier, Tape & Reel 7“, Qty 250 QPA1022EVB0 QPA1022 Evaluation Board, Qty 1 Data Sheet Rev B, June 2020 | Subject to change without notice 1 of 17 www.qorvo.com QPA1022 ® 8.5    11 GHz 4 W GaN Power Amplifier Ab

Features

  • Frequency Range: 8.5 .
  •  11 GHz.
  • PSAT (PIN=12 dBm): 36.5 dBm.
  • PAE (PIN=12 dBm): 45 %.
  • Power Gain (PIN= 12 dBm): 24.5 dB.
  • Small Signal Gain: 32 dB.
  • Bias: VD = 22 V, IDQ = 180 mA.
  • Package Dimensions: 4 x 4 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram.

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Datasheet Details

Part number QPA1022
Manufacturer Qorvo
File Size 1.05 MB
Description 4 W GaN Power Amplifier
Datasheet download datasheet QPA1022 Datasheet
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QPA1022 ® 8.5 – 11 GHz 4 W GaN Power Amplifier Product Overview Qorvo’s QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 – 11.0 GHz, the QPA1022 provides > 4 W of saturated output power and 24.5 dB of large-signal gain while achieving 45% poweradded efficiency. Packaged in a small 4 x 4 mm plastic overmold QFN, the QPA1022 is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems.
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