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QPA1003D - 10W GaN Power Amplifier

Datasheet Summary

Description

Qorvo’s QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15).

8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB.

Features

  • Frequency Range: 1 .
  •  8 GHz.
  • POUT: 40 dBm (PIN = 15 dBm).
  • PAE: 30 % (PIN = 15 dBm).
  • Large Signal Gain: 25 dB (PIN = 15 dBm).
  • Small Signal Gain: 30 dB.
  • Bias: VD = +28 V, IDQ = 650 mA.
  • Chip Dimensions: 3.3 x 3.55 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 2 3 1 4.

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Datasheet Details

Part number QPA1003D
Manufacturer Qorvo
File Size 477.66 KB
Description 10W GaN Power Amplifier
Datasheet download datasheet QPA1003D Datasheet
Additional preview pages of the QPA1003D datasheet.

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QPA1003D 1 – 8 GHz 10 W GaN Power Amplifier Product Description Qorvo’s QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003D is matched to 50Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands.
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