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QPA1011D - 25W GaN Power Amplifier

Datasheet Summary

Description

Qorvo’s QPA1011D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15).

11 GHz and typically provides 25 W saturated output power with power-added efficiency of 37% and large-signal gain of 20 dB.

Features

  • Frequency Range: 7.9 .
  •  11 GHz.
  • POUT: 45 dBm at PIN = 25 dBm.
  • PAE: 37 % at PIN = 25 dBm.
  • Large Signal Gain: 20 dB at PIN = 25 dBm.
  • Small Signal Gain: 26 dB.
  • Integrated Power Detector.
  • Bias: VD = 24 V, IDQ = 1200 mA, VG =.
  • 2.0 V Typical.
  • Pulsed VD: PW =100 µS, DC = 10%.
  • Chip Dimensions: 2.75 x 3.12 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applica.

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Datasheet Details

Part number QPA1011D
Manufacturer Qorvo
File Size 0.95 MB
Description 25W GaN Power Amplifier
Datasheet download datasheet QPA1011D Datasheet
Additional preview pages of the QPA1011D datasheet.

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Full PDF Text Transcription

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QPA1011D 7.9 – 11.0 GHz 25 W GaN Power Amplifier Product Description Qorvo’s QPA1011D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The QPA1011D operates from 7.9 – 11 GHz and typically provides 25 W saturated output power with power-added efficiency of 37% and large-signal gain of 20 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. QPA1011D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations.
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