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QPA1010D - 15W GaN Power Amplifier

Datasheet Summary

Description

Qorvo’s QPA1010D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15).

11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB.

Features

  • Frequency Range: 7.9 .
  •  11 GHz.
  • POUT: 42 dBm at PIN = 24 dBm.
  • PAE: 38 % at PIN = 24 dBm.
  • Large Signal Gain: 18 dB at PIN = 24 dBm.
  • Small Signal Gain: 25 dB.
  • Integrated Power Detector.
  • Bias: VD = 24 V, IDQ = 600 mA, VG =.
  • 1.9 V Typical.
  • Pulsed VD: PW =100 µS, DC = 10%.
  • Chip Dimensions: 2.75 x 1.65 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functio.

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Datasheet Details

Part number QPA1010D
Manufacturer Qorvo
File Size 1.24 MB
Description 15W GaN Power Amplifier
Datasheet download datasheet QPA1010D Datasheet
Additional preview pages of the QPA1010D datasheet.

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Full PDF Text Transcription

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QPA1010D 7.9 – 11.0 GHz 15 W GaN Power Amplifier Product Description Qorvo’s QPA1010D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The QPA1010D operates from 7.9 – 11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. QPA1010D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations.
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